| 학회 |
한국화학공학회 |
| 학술대회 |
2006년 봄 (04/20 ~ 04/21, 대구 인터불고 호텔) |
| 권호 |
12권 1호, p.1009 |
| 발표분야 |
재료 |
| 제목 |
Effect of the applied voltage on the electrodeposited Ru film |
| 초록 |
Electrochemical deposition is an attractive technique to deposit a conformal seed layer because of good step coverage, low tool cost of ownership, and it is amendable to ECD Cu. This technology would have to address the Cu conformal deposition on high aspect ratio (A/R) features with a size of 22 and 33 nm nodes, and three-dimensional devices. In addition, it would need to address the deposition of Pt-Ru alloys for electro-oxidization of methanol. In this work ruthenium was electrochemically deposited onto blanket Ti substrates followed by Cu electrochemical deposition for metallization. Samples were characterized by FE-SEM, XPS, AFM, XRD, and RBS. With increasing voltage FE-SEM images indicated an irregular distribution and a non-homogeneous surface consisting Ru islands on the Ti film. At an optimal applied voltage of 2.0 V the sample was homogeneous and smooth with a RMS roughness of 8.2 nm. X-ray diffraction showed preferential ＜101＞ texture but a broad asymmetrical Ru peak at 2Θ= 44.0°. XPS analysis showed the presence of metallic Ru layer. The Ti substrate was stable with respect to ECD Ru but the Ru/Ti bilayer is not stable in the Cu acid bath. |
| 저자 |
김형일, 김영순, 서형기, 김길성, 최용석, 신형식
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| 소속 |
전북대 |
| 키워드 |
Ruthenium seed layer; electrochemical deposition; Rutherford Backscattering spectrometry
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| E-Mail |
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| 원문파일 |
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