| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Fabrication of SiO2 Nanopatterns by Directed Self-assembly of Si-Containing Block Copolymers |
| 초록 |
Directed self-assembly of a lamellar-forming polystyrene-block-poly(4-(tert-butyldimethylsilyl)oxystyrene) (PS-b-PSSi) diblock copolymer has been investigated for nanolithography. Nanopatterns with various line widths were fabricated with different molecular weights. Since organic-inorganic block copolymers have a large difference in etch resistance between the organic and inorganic blocks, sub-20-nm lines of silicon oxide can be directly produced upon oxygen plasma treatment. Orientation of lamellar nanodomains was manipulated simply by adjusting the relative composition of selective and non-selective solvents in the annealing solvent. The use of a PS-brush treated substrate is especially advantageous for achieving long-rage ordering and minimizing defect densities, and the Si content in PSSi leaves a robust oxide etch mask after one-step reactive ion etching. This block copolymer system can be applied to the nanopatterning processes that require high aspect ratio structures. |
| 저자 |
박창홍, 강은희, 김진백
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| 소속 |
한국과학기술원 |
| 키워드 |
directed self-assembly; diblock copolymer; nanolithography; nanopattern
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| E-Mail |
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