| 초록 |
Photoresists play a key role in enabling the patterning process. However, with the increasing complexity of patterning ever smaller features, photoresists need to be supported by a large number of materials, such as antireflective coatings, hardmasks, or anti-collapse rinses. The two first examples, top antireflective coatings (TARCS) and anti-collapse rinses (FIRM™), exemplify how materials design can maintain performance even in the face of environmental constraints on the possible chemistries. Developer-soluble BARCs avoid dry etch patterning of the underlayer. Shrink materials are applied to existing photoresist patterns in order to reduce the spaces left by resist patterning. Directed Self Assembly (DSA) of block copolymers takes lithography a significant step further. Lithographic guide patterns are still required to position and align the self assembly process, but DSA materials exhibit built-in “chemical intelligence” that allow either shrink and repair (“rectification”) of contact holes, or the frequency multiplication of line/space patterns that can serve as a low-cost alternative to triple, quadruple, or higher patterning. |
