| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | G. 나노/박막 재료 |
| 제목 | Growth and investigation thermoelectric properties of BixTey and BixTey oxide/ZnO heterostructures |
| 초록 | Thermoelectric materials have attracted intense interest due to their potential applications in cooling and power generation. The performance of thermoelectric devices depends on the dimensionless figure of merit, ZT, which is defined as ZT=S2σT/κ ; where S is the Seebeck coefficient, T is the temperature, σ is the electrical conductivity, and κ is the thermal conductivity which is the sum of the electronic (κe) and the lattice (κl) contributions. During the past several decades, Bi2Te3 compound was found to be one of the best thermoelectric materials, which exhibits high ZT values at room and lower temperature region. To achieve a higher ZT, it requires maximizing the Seebeck coefficient and electrical conductivity but minimizing the thermal conductivity. However, the interdependence among these parameters makes the maximization of ZT a challenge so far. The growth thin film with different composition or structures may be a promising method to overcome that challenge. In this work, several structures of BixTey and BixTey oxide/ZnO heterostructures films were fabricated on sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE) system. The morphology and crystal structural of the films were characterized by reflection high energy diffraction (RHEED), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high-resolution x-ray diffraction (XRD) method. The effects of structures to the film electrical and thermoelectric properties were investigated. |
| 저자 | Trong Si Ngo1, Soon-Ku Hong2, Duc Duy Le1 |
| 소속 | 1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 | epitaxial film; PAMBE; thermoelectric; heterostructures; oxide thin film |
