| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | Characteristics of ZnO thin film Deposited by Atomic Layer Deposition Method |
| 초록 | The fabrication method of ZnO films including sputtering, pulsed laser deposition, e-beam evaporation, sol-gel method, chemical vapor deposition, and atomic layer deposition (ALD). Among these technologies, ALD performed only by a surface reaction between precursors gas been recognized as a unique fabrication technology by which high quality films with low structural imperfection can be obtained. The process parameters were identified as precursor flow rate, substrate temperature. The vaporization temperature of the Zn(C5H5)2 (DEZ) was 20℃, and Ar gas was used as carrier gas for the DEZ delivery. Ar also was used as purge gas and pursing time was varied among 2s, 4s, 6s and 8s. The DEZ pulse times were fixed at 1s, and H2O oxidant pulse time was also fixed at 1s. Glass and sapphire were used as a substrate. The ZnO thin film was deposited at substrate temperature range from 50℃ to 200℃. The deposited film was shown by using PL, and the preferred growth direction and crystal structure were examined by XRD. The film compositions (O/Zn ratio) were investigated by Rutherford Backscattering Spectroscopy. The carrier-type, concentrations and electron mobility were measured using a Hall measurement at room temperature. And the surface roughness of the films was measured by atomic force microscopy. |
| 저자 | 송정빈1, 허재성1, 이동건1, 장삼석1, 이병훈1, 변동진1, 손창식2, 최인훈1 |
| 소속 | 1고려대, 2신라대 |
| 키워드 | ZnO; Atomic layer depostion |
