화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터)
권호 36권 2호
발표분야 유기전자소자용 소재 및 소자(분자전자소재 부문위원회)
제목 Low band gap n-type core-extended perylenetetracarboxylic bisimides derivatives for an organic (polymer) photovoltaic device application
초록 The power-conversion efficiency of photovoltaic device(PV) depends on photo-absorption process which generates excitons. For this reason, much research has been focused on synthesizing low bandgap materials and characterizing the PV device performance by blending low bandgap donors with fullerene derivatives. However, little attention has been paid to develop low bandgap acceptors. In this research, the core-extended perylene bisimides(PBI) derivatives have been synthesized and characterized. Thermal adducts of PBI and 1,2,4-triazoline-3,5-dione were spontaneously oxidized to yield fully pi-conjugated fused polybenzenes. They absorbed light from visible to NIR up to 850nm and have high stable and reversible redox processes from a CV analysis. The PBI derivatives were polymerized by Ullmann reaction to improve electronic properties and film application. With new acceptors, PV performances were measured by blending them with several polymer donors and compared with a bilayered PV device.
저자 장병권1, 이창렬2, 도정윤1
소속 1부산대, 2광주과학기술원 고등광기술(연)
키워드 low band gap; acceptor; n-type; perylene; solar cell; OPV
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