| 초록 |
Thin film transistors (TFTs) using metal oxide have been studied for various applications such as liquid crystal displays, organic light emitting diode, and flexible displays. Especially, In2O3 based oxide TFTs have been widely investigated due to their high field effect mobility, high transparency and low processing temperature. For instance, Sn doped In2O3 employed as transparent electrode with low resistivity (~10-4 Ω cm) and high transmittance of the visible rays (＞80%). In addition, In2O3 is a major channel component of In-Ga-Zn-O thin film transistors. In this work, conformal and self-limiting In2O3 and In doped ZnO (IZO) films were deposited by atomic layer deposition (ALD) using dimethylamino-dimethylindium (DMLDMIn) and diethylzinc (DEZ) and water vapor. Pulsing times of precursor and reactant were varied to confirm the ALD process. The substrate temperature was kept to 300 °C and the IZO film composition was controlled by changing number of cycles of each precursors. The microstructure and optical properties of the films was analyzed by XRD and UV-VIS. Hall measurements indicated that the electrical properties were improved as increasing ratio of indium. |
