| 학회 | 한국공업화학회 |
| 학술대회 | 2022년 봄 (05/11 ~ 05/13, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 | 26권 1호 |
| 발표분야 | 포스터-에너지저장·변환 |
| 제목 | Improving the Mobility and Stability in In-Ga-Zn-Sn-Oxide TFT by Low-Temperature Post-Treatment Process |
| 초록 | Oxide semiconductors such as IGZO are broadly used as backplane materials for displays due to their excellent optical / electrical properties, low processing temperature, and low-cost fabrication processability. However, it is essential to secure a high mobility to realize an ultrahigh resolution and high frame rate driving. Therefore, IGZTO with good mass density and low oxygen vacancies(VO) density by adding Sn is being studied as an active layer composition. In this study, the IGZTO thin film was fabricated through DC magnetron sputtering process, and the performance of IGZTO TFT was optimized through deep ultraviolet (DUV)-thermal dual treatment under the various time and temperature conditions. Dual treatment enables to obtain high mobility and stability at a relatively low temperature by reducing of oxygen vacancies (VO) and increasing M-O bonding. As a result, the performance of IGZTO achieved mobility of 35.06 cm2/Vs compared to high annealing treatment condition. |
| 저자 | 박인표1, 최준영2, 황부경2, 홍정표2, 허수원2 |
| 소속 | 1한국세라믹기술원 / 부산대, 2한국세라믹기술원 |
| 키워드 | Oxide semiconductors; IGZTO TFT; DUV-thermal dual treatment |
