| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Piezopotential Modulation of Schottky Barrier in a Graphene-Semiconductor Heterostructure |
| 초록 |
We propose an efficient method to utilize the piezopotential for modulating electrical signals. This was done by capacitively coupling the piezoelectric material with a Schottky barrier (SB)-tunable graphene electrode, using an ion gel electrolyte. Through capacitive coupling, the piezopotential could modulate the work function of a graphene electrode by 0.89 eV. This was visualized directly using Kelvin probe force microscopy experiments for the first time. Consequently, a piezoelectric nanogenerator (PENG) could change the current density of the semiconductor layer by more than three orders of magnitude with strain, and yield a high current density larger than 10.5 A·cm-2. This work presents an efficient method for harnessing the piezopotential generated from PENG to actively control the operation of flexible electronics through external mechanical stimuli. |
| 저자 |
김성찬1, 최영진1, Qijun Sun2, 강문성3, 송영재1, Zhong Lin Wang2, 조정호4
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| 소속 |
1성균관대, 2NCNST, 3숭실대, 4School of Materials Science and Engineering |
| 키워드 |
piezopotential; graphene; Schottky barrier; Kelvin probe force microscopy; vertical transistor
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| E-Mail |
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