| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Schottky Barrier-Controllable Graphene Electrode for Organic Vertical P-N Junction Photodiodes |
| 초록 |
Monolayer graphene has been recently used as an electrode to develop novel electronic device architectures that exploit the unique, atomically-thin structure of the material with a low density of states at its charge neutrality point. In this work, we demonstrate the next level of complexity in a vertical graphene–semiconductor architecture. Specifically, we fabricated an organic vertical p-n junction on top of a graphene electrode constituting a novel gate-tunable photodiode device structure. The model device confirmed that controlling the Schottky barrier height at the pentacene-graphene junction can i) suppress the dark current density and ii) enhance the photocurrent of the device, both of which are critical to improving the performance of a photodiode. |
| 저자 |
최영진1, 김종수1, 우휘제1, 양지혜2, 송영제1, 강문성2, 조정호1
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| 소속 |
1성균관대, 2숭실대 |
| 키워드 |
graphene; Schottky barrier; work function tunability; organic photodiode; vertical heterostructure
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| E-Mail |
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