| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Barrier properties of silicon oxide (SiOx) coatings on polymeric substrates by PECVD: Effects of argon flow rate, oxygen flow rate and bias voltage. |
| 초록 |
Ar & O2 flow rate effects on SiOx coatings at a fixed RF power of 300W were studied in RIE mode. The negative dc bias voltage effect on SiOx was only studied for PEN substrate in PECVD mode. The WVTR of untreated PET and PEN were 54.56, & 6.27 g/m2/day, respectively. The minimum WVTR, 0.47 g/m2/day for PET & 0.29 g/m2/day for PEN were observed for 1.5 g/h of HMDSO flow rate with the coating thickness of 415.44 nm in RIE mode. The WVTR of 1.40 g/m2/day was found for HMDSO flow rate of 1.0 g/h at -150 V of bias voltage for the same conditions with the coating thickness of 228.46 nm & no significant change in WVTR was observed for the HMDSO flow rate higher than 1.0 g/h. The broad O-H stretching peak not found for RIE mode, was diminished & carbon content was increased with the increase of HMDSO flow rate in PECVD mode. AFM and SEM images revealed a correlation between SiOx morphology & water vapor barrier performance. |
| 저자 |
Choudhury Moinul Haque1, 김원호1, 김곤호2, 김성룡1
|
| 소속 |
1충주대, 2서울대 |
| 키워드 |
Hexamethyl disiloxane (HMDSO); SiOx; FTIR; WVTR; Bias voltage |
| E-Mail |
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