| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors |
| 초록 |
We have demonstrated the preparation of interpenetrating polymer network dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers with the crosslinkable polymeric silsesquiazine. This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as three orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths. |
| 저자 |
박경민1, 이화성2, 김종대1, 한태환1, 유광희1, 임호선3, 이동렬1, 곽영제1, 조정호1
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| 소속 |
1숭실대, 2NYU, 3MIT |
| 키워드 |
interpenetrating polymer network; IPN gate dielectrics; silsesquiazine (SSQZ);
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| E-Mail |
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