| 초록 |
We demonstrate, the use of a solution-processed rGO layer as a work function tunable electrode in vertical SB transistors. The rGO electrodes were deposited by spray-coating onto the substrate. By varying the gate voltage applied, the work function of rGO and thus the SB formed at the rGO-PTCDI-C8 interface could be modulated. The resulting vertical SB transistors based on rGO-PTCDI-C8 heterostructures exhibited electrical properties comparable with a CVD-grown graphene electrode based device. Charge injection was dominated by thermionic emission at high temperature. As the temperature decreased, impurity state-assisted hopping occurred. At low temperature and negative gate voltage, the reduced width of barrier induced by a high drain voltage yielded F-N tunneling at the interface. The use of scalable solution-processed rGO as a work function tunable electrode in vertical SB transistors opens up new opportunities for realizing large-area flexible 2D materials-based electronic devices. |
