| 학회 |
한국공업화학회 |
| 학술대회 |
2011년 봄 (05/11 ~ 05/13, 제주국제컨벤션센터) |
| 권호 |
15권 1호 |
| 발표분야 |
나노 |
| 제목 |
Synthesis of In-Ga-Zn-O semiconductor nanoparticles |
| 초록 |
Indium-galium-zinc-oxide (IGZO) semiconductors have been investigated as an active layer in thin-film transistor for high-definition liquid crystal display (LCD) device and organic light-emitting diode (OLED). Their nanoparticles suspension can be used as ink for the low-temperature fabrication of thin film transistor. We have prepared aqueous IGZO nanoparticles suspension from sol-gel reaction of their hydroxide. By changing the reaction temperature, particle size was controlled from 10 nm to 20 nm and also crystallinity was controlled by changing pressure inside reactor. Then, their thin film was prepared by spin-coating on p-doped silicon wafer with silion oxide layer (~200nm) and their electrical properties were investigated. |
| 저자 |
이유진1, 이기라1, 이계행2
|
| 소속 |
1충북대, 2한국기초과학지원(연) |
| 키워드 |
Indium-gallium-zinc-oxide(IGZO); metal-insulator-oxide-semiconductor
|
| E-Mail |
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