| 학회 | 한국재료학회 |
| 학술대회 | 2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 | 14권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Effect of Argon Gas Flow-Rate on Temperature Gradient at the Interface between Si Melt and Solid in Czochralski 450-mm Single Crystal-Silicon Growth |
| 초록 | The diameter of silicon wafers used in the microelectronics devices shows a tendency to increase in the view of production cost reduction. The next-generation wafer size, 450 mm in diameter, will start mass-production in 2012 according to ITRS. In this work, we considered the effect of argon gas flow-rate on the temperature gradient at the interface between Si melt and solid to achieve the successful growth of pure silicon ingot (agglomerated defect-free) on the 450-mm-diameter Czochralski silicon-crystal growth under CUSP magnetic field. Silicon melt convection, temperature distribution in furnace, melt/crystal interface shape and defect distributions were calculated as 450 mm-silicon-single crystal by numerical simulation. It was shown that an increase in argon gas flow-rate on the furnace made larger temperature gradient (G) at the ingot center and the distribution of temperature gradient between the ingot center and edge (ΔG). The value of the ratio of the growth rate (V) to the axial temperature gradient(G), V/G ratio, decreased with increasing argon gas flow-rate determining the structural loss yield and agglomerated defect density. We confirmed that the argon gas flow-rate influences the crystal defect density because of determining the distributions of both G and ΔG. *This work was supported by Brain Korea 21 project in 2008. |
| 저자 | Hyung-Jin Kim1, Jin-Seong Kim2, In-Ji Lee1, Gon-Sub Lee2, Jea-Gun Park1 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | Czochralski; Gas flow; Magnetic Field; Numerical Simulation |
