| 초록 |
The photoconductive AgGaSe2 (AGS) layers were grown by the hot wall epitaxy method. From the photocurrent (PC) measurement, three peaks in the PC spectra were observed at the temperature ranging from 10 to 100 K. The evidence suggests that these peaks are caused by the band-to-band transition from the valence band state of Γ7(A), Γ6(B), and Γ7(C) to the conduction band state of Γ6, respectively. Thus, the crystal field splitting and the spin orbit splitting were estimated to be 0.2508 and 0.3101 eV, respectively. |
