| 초록 |
Progress in halide perovskite (HP)-based resistive switching (RS) memory devices beyond optoelectronics has been rapid. For further progress, lead, a common element in HPs, must be substituted by nontoxic alternatives such as Sn. Unfortunately, cesium tin iodide (CsSnI3), which uses Sn instead of toxic lead, has not been investigated for RS memory devices, because Sn2+ in the HP is easily oxidized to the more stable Sn4+ in ambient conditions. Furthermore, temperature-tolerant all-inorganic HPs are more suitable for silicon-based commercial fabrication processes with high thermal budgets than organometallic HPs are. Here, we successfully synthesized CsSnI3 as a lead-free all-inorganic HP and fabricated RS memory devices based on the material. We controlled the RS behaviors of the devices by applying different top electrodes, Ag and Au. This work demonstrates designable RS memory devices based on environmentally friendly and temperature-tolerant HPs for nonvolatile memory devices. |
