| 초록 |
OPVs with a conductivity enhanced by doping with DMSO or EG were successfully fabricated to increase the photon harvesting property through LSPR by adding Au nanoparticles to PH500, a hole collection layer, and effectively separating the generated charges. At Au nanoparticle and DMSO doping concentrations of 20 wt% and 1 wt%, respectively, the characteristics of the OPVs were optimized with a short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and estimated PCE of 8.0 mA/cm2, 0.595V, 57.8%, and 2.6%, respectively. Compared to the device with a buffer layer of conventional PEDOT:PSS, PCE wasimproved by ca. 85%. The series resistance (Rs), shunt resistance (Rsh), and hole mobility were 18Ωcm2, 673Ω cm2 and 4.2 cm2/Vs, respectively. |
