| 초록 |
Tin sulfide (SnS) is an IV-VI binary semiconductor compound. Both constituent elements of this compound, Tin (Sn) and Sulphur (S) are earth-abundant materials. SnS in its orthorhombic crystalline structure has direct and indirect band gap values between 1.3–1.5 eV and 1.0–1.1 eV, respectively and has p-type conductivity. It has higher absorption coefficient (~105 cm−1) like other photovoltaic materials (GaAs and CdTe etc). These properties make it a better alternative absorber material for thin film solar cell (TFS) applications. Our present work is mainly concerned with the study of influence of sputtering power (60-160W) on structural and optical properties of SnS thin films deposited by RF magnetron sputtering on glass substrates. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by transmittance and reflectance spectra measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 104 –106 cm−1. The energy band for the films were found to be in the range of 1.2–1.6 eV, indicating a strong match with the solar irradiance spectrum. |
