| 초록 |
The main issue in the development of nanoporous ultralow dielectrics as interlayers of system LSI is the prevention of plasma damage as well as mechanical properties with nano-sized pores at considerably high porosity. Trimethoxysilyl hexanetriol (TMSHT) as a new cyclic reactive porogen was synthesized by substituting silanol end groups of cyclohexanetriol to trimethoxysilyl groups. The copolymer of methyltrimethoxy silane (75 mol%) and 1,2-bis(triethoxysilyl)ethane (25 mol%) was used as an organosilicate matrix. Consequentially, nanoporous ultralow dielectrics (ULK) were shown thickness reduction of 44.757% after plasma-induced damage (PID) test at 60 vol% TMSHT loading. It was reduced value compared with that of 52.174% by introducing non-cyclic reactive porogen at similar porosity. Furthermore, the ULK with TMSHT was shown ultralow dielectric constant (k = 2.09) with high mechanical properties (E = 8.15 GPa and H = 1.35 GPa). |
