| 초록 |
Hydrogenated amorphous silicon (a-Si:H) thin films are fabricated by RF magnetron sputtering method. For solar cell application, a-Si:H layers are required to show low dark conductivity and high photoconductivity and, thus, high photosensitivity. Hydrogen partial pressure and working pressure were mainly adjusted to control bonding configuration and hydrogen concentration in the film. Especially, we attempt to minimize the defect density of the a-Si:H films to obtain high photosensitive absorber layer. At high working pressure of 12mTorr, all prepared amorphous and nanocrystalline silicon films has shown dominant IR absorption peak at 2100cm-1 which indicates Si-H2 stretching mode; grain boundary and microvoid. When working pressure was decreased to as low as 3mTorr with hydrogen partial pressure of 0.1, bonding configuration of the film has shown dominant IR absorption peak at 2000cm-1 and their photosensitivity was maximized. |
