| 초록 |
We chemically graft a fluorinated polymer brush nanolayer onto the polar oxide dielectric surfaces via a simple and easy fabrication process in ambient air. The para-fluorine-thiol click reaction between polypentafluorostyrene and mercaptopropyltrimethoxysilane is used to synthesize a fluorinated polymer brush (PFS-brush). A variety of semiconductor materials are employed for the OFETs prepared with PFS-brush-treated SiO2 dielectrics, including vacuum-processed pentacene, N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide, solution-processed TES-ADT and DPP based polymer. The OFETs prepared using the PFS-brush-treated SiO2 dielectrics display the highest mobilities and smallest hysteresis among the devices we studied. Furthermore, the PFS-brush-treated SiO2 provide the best device stability under a sustained gate bias, suggesting that the PFS-brush surface minimize the number of traps present in the OFET. |
