| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Control of electric characteristic of atomic layer deposited Al-doped SnO2 using annealing process |
| 초록 | Metal-oxide semiconductors are used thin film transistor (TFTs) channel layer. Because metal-oxide thin films have wide band gap and high carrier mobility, low process temperature. In2O3, InGaZnO thin films are known as the metal oxide films with n-type characteristics. But in the case of Indium (In), it is difficult to mass-produce because it is the rare-earth element. For this reason, SnO2 thin films are being studied recently. Tin (Sn) is an element adjacent to indium in the periodic table, and has an electron structure ([Kr]4d105s0) with excellent electrical characteristics similar to In. In addition, Sn has the advantage of being able to mass-produce because there is a large amount on earth. However, in the case of SnO2 thin films, the on/off current ratio tends to reduce due to high conductivity. To solve this problem, research is being conducted to lower the oxygen vacancy concentration by doping Al (aluminum) in SnO2 thin film. We deposited Al doped SnO2 thin films using atomic layer deposition (ALD) & ozone (O3) reactant and then conducted the study to improve electrical properties through annealing process. The single Al2O3 doping layer (1cycle) was inserted in the middle of SnO2 thin films (100 cy, 10 nm). The annealing process was conducted at 300, 400, and 500 ℃ in air atmosphere for 1hour. We confirmed that Al was doped in SnO2 thin film using Auger electron spectroscopy (AES). In X-ray photoelectron spectroscopy (XPS), it was confirmed that as the annealing process temperature increased, the oxygen vacancy concentrations in the SnO2 thin films were decreased. As a result of IV analysis and hall measurement analysis, the Al-doped SnO2 thin film which was annealed at 500 ℃ revealed the better on/off current ratio (1.82 X 10^6) and mobility value (1.56 cm2/V∙s). That is, it could be seen that when Al was doped in the middle of SnO2 and annealed at 500 ℃, it has the better channel layer characteristics than as-dep SnO2 thin film. |
| 저자 | 이성권, 김지수, 이도욱, 김병욱, 전형탁 |
| 소속 | 한양대 |
| 키워드 | <P>Al doped SnO2 thin film; thin film transistor; annealing process; oxygen vacancy; atomic layer deposition</P> |
