| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Resistive switching properties of MAPbI3-xClx thin films with chlorine-rich grain boundaries |
| 초록 |
We report resistive switching properties of methylammonium lead halide (MAPbX3) film with substitution of chlorine ions for iodine ions. Thermal annealing induced grain growth of MAPbI2.9Cl0.1 and removal of chlorine ions. At low temperatures, the chlorine containing perovskite film has larger grain size than the iodine-only perovskite, whereas annealing at 130°C during 30 min results in almost the same average grain size for the both films. During annealing at 130oC under vacuum, content of chloride ions at the grain interior reduces faster than that at the grain boundary. After annealing at 130°C during 30 min, chlorine was still detected from the chlorine-incorporated perovskite film with a higher content at the grain boundary than the interior. This segregation may enhance electronic field-induced migration of chloride ion which is smaller than iodide ion. To examine the effect of chlorine at the boundary on resistive switching properties, a device with Au/PMMA/MAPbI3-xClx/ITO structure was fabricated. The different resistive switching behaviors are studied from the viewpoint of activation energy of vacancy migration. |
| 저자 |
윤용한1, 한길상2, 이승학1, 윤영훈1, 고창현3, 이상욱1
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| 소속 |
1경북대, 2성균관대, 3숙명여대 |
| 키워드 |
halide perovskite; resistive switching; grain boundary; ion diffusion
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| E-Mail |
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