| 초록 |
In group III-nitride based semiconductor structures, the incorporation of high indium-composition InGaN has been severely limited by highly inefficient strain-induced polarization fields and prohibitively numerous-defect densities. So far, there is still no clear approach to solving this issue. Here, we have shown a new approach to incorporating high-concentrations of indium in the InGaN quantum-structure by using a non-polar quasi-quantum dot formed in quantum pyramid heterostructure. This unique epitaxial growth was achieved by integrating a 1-dimensional nanowire and a 0-dimensional quantum dot structure using MOCVD system. It was confirmed the formation of high-efficiency quantum-sliding heterostructure and high-quality nanowire structure by FE-SEM and TEM measurements. Furthermore, it has been suggested that such a quantum-dot structure can dramatically improve radiative recombination through a new sliding bandgap mechanism. The first demonstration in the integration of nanowire and quantum pyramid (with quasi-quantum dot) structures will be open a new avenue to break though the limitations of high-indium incorporation in photonic semiconductor systems. |
