| 초록 |
In the Inverted OPV structure, ZnO (Zinc Oxide) is widely used for an electron transfer layer because it is good n-type materials and suitable for the solution process using sol-gel method. However, the poor interface between hydrophilic ZnO and hydrophobic active layer are crucial drawback to the efficient charge transfer in the devices. Hence, we designed and synthesized the new organic buffer materials to modify the ZnO surface for better interface properties. Without buffer treatment on ZnO, the PCE10/PC71BM devices showed the power conversion efficiency (PCE) of 7.18% (Voc = 0.81 V, Jsc = 15.30 mA/cm2, Fill Factor (FF) = 0.578). After buffer treatment on ZnO, the device showed highly improved PCE of 8.27% (Voc = 0.81 V, Jsc = 16.31 mA/cm2, FF = 0.627). The synthesized organic buffer material effectively improved adhesion with an active layer and reduced surface barrier between active layer and cathode. |
