| 초록 |
The effects of different annealing atmospheres on the chemical surface structure of the HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (me) of back-gated ZnO nanowire field-effect transistor (FET). Compared to O2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited higher transconductance of 1.77×10–7 A/V, on/off current ratio of ~1.2×104, and electron mobility of 11.90 cm2/V·s. This improvement can result from the sharp shrinks of the amount of adsorbed oxygen species, which act as Coulombic scattering centers, caused by the passivation of hydrogen atoms at the interface between ZnO nanowire channel and HfO2 dielectric layer. |
