| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터) |
| 권호 |
42권 1호 |
| 발표분야 |
대학원생 구두발표 (발표15분) |
| 제목 |
Controlling the threshold voltage of organic transistors without degrading the carrier mobility via synthesis of ultrathin, homogeneous copolymer dielectrics |
| 초록 |
This study demonstrates the usability of copolymer dielectrics to control the threshold voltage (VT) of organic thin film transistors (OTFTs) by modifying the composition of copolymer dielectrics via initiated chemical vapor deposition (iCVD). We newly synthesized the copolymer dielectric layers with different compositions from two monomers, 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane (V3D3) and 1-vinylimidazole (VI). The synthesized copolymer dielectric layers even with thickness of sub 23 nm exhibited extremely low leakage current density regardless of the composition. The VT of C60 OTFTs can be controlled by tuning the VI fraction in the copolymer dielectrics used as gate dielectrics. Furthermore, we applied the ultrathin interfacial layer with thickness of 3 nm, pV3D3 layer, to the copolymer gate dielectrics, resulting in no degradation of high mobility while the threshold voltage was gradually varied according to the composition of copolymer dielectrics. |
| 저자 |
박관용1, 성혜정1, 최준환1, 황완식2, 임성갑1
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| 소속 |
1KAIST, 2한국항공대 |
| 키워드 |
organic thin-film transistors (OTFTs); initiated chemical vapor deposition (iCVD); ultrathin copolymer dielectrics; threshold voltage; surface treatment
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| E-Mail |
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