| 초록 |
Following the development of wearable electronics, Organic thin film transistor nonvolatile memories (OTFT-NVMs) with polymeric electret layers have attracted great attention. The low-power operation of OTFT-NVM with polymer blocking dielectric layer (BDL) is challenging because lack of candidate with strong insulating properties at thin thickness. This study shows low-power, flexible NVM using bilayer staking of 3nm electret layer with excellent insulating BDL via initiated chemical vapor deposition. Novel crosslinked poly(1,4-butanediol diacrylate) film was synthesized in role of BDL, showing high breakdown field(Ebreak ＞ 8MV cm-1 with thickness 21.3 nm). 3 nm thick (poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane)) was used as polymer electret layer. Fabricated memory shows large window (＞5 V) at reduced programming/erasing voltage less than 15V. The large retention time as long as 108 s. Furthermore, the memory maintain performance at 1.6% of tensile strain. |
