| 초록 |
Organic field-effect transistor (OFET)-based gas sensors are promising for high selectivity and low-cost production. Because the electrical signals in a gas sensor are tuned upon interaction between gas-phase analytes and the organic semiconductor, a wide range of organic semiconductors can be used for specific chemical detection. However, the sensitivity requires morphological controls for high surface area of the sensing element. That is, the performance of the gas-phase chemical sensor largely depends on the morphology of the organic semiconductor. In this study, we applied a strategy of blending a polymer semiconductor and a small molecule and selective etching, to control the surface area and thin-film morphology of the organic semiconductor. Large surface area facilitates the access of the analytes to the organic semiconductor channel. As a result, we observed drastic changes in electrical characteristics of the gas-phase chemical sensors. |
