| 학회 | 한국화학공학회 |
| 학술대회 | 2019년 가을 (10/23 ~ 10/25, 대전컨벤션센터) |
| 권호 | 25권 2호, p.1911 |
| 발표분야 | 재료 (Materials) |
| 제목 | Experimental and Computational Study on the Mechanism of Hydrogen on MoSe2 Growth and Etching in CVD |
| 초록 | Molybdenum diselenides have great attractive to electronic, photoelectric devices for its outstanding electric properties. It is necessary to provide large-scale and high crystalline monolayer MoSe2. Typical synthesis for high quality TMDC is CVD. In CVD, the hydrogen helps growth of MoSe2 by reduction of MoO3 precursor, but also it etches grown-MoSe2 domain. Here, we have investigated that the existence of MoOx prevents MoSe2 monolayer to be desorbed by hydrogen etching. Pure MoSe2 monolayer and MoSe2 monolayer with oxide seeds (MoSe2+Ox) are treated under H2 condition. It is obtained using SEM and AFM analysis that the shape of pure MoSe2 are changed but MoSe2+Ox are not changed much after H2 treatment. As we have computationally calculated, H prefers to adsorb to MoOx than atoms in MoSe2 layer, so that MoOx hinders etching of MoSe2. It also demonstrates that hydrogen supports the growth of MoSe2 by reducing precursor rather than etching nuclei in nucleation steps. Our research offer insight into the MoSe2 growth mechanism and pave a way to synthesize high quality MoSe2 for electronic devices. |
| 저자 | 황윤정, 박영수, 신내철 |
| 소속 | 인하대 |
| 키워드 | 재료 |
| 원문파일 | 초록 보기 |
