| 학회 |
한국화학공학회 |
| 학술대회 |
2019년 가을 (10/23 ~ 10/25, 대전컨벤션센터) |
| 권호 |
25권 2호, p.1944 |
| 발표분야 |
재료 (Materials) |
| 제목 |
Significance of RTP and its ramp rate effect on the properties of CTS thin films |
| 초록 |
To simplify the thin films fabrication process and solve the elements volatility problem, thermal annealing process (RTP) has been widely used for the fabrication of absorber films in two-stage process. In this investigation, Cu2SnS3 (CTS) thin films were prepared by two-stage process which involved sputtering and followed by rapid thermal annealing process (RTP). The deposition of CTS thin films was carried out at different heating rates from 10-50 oC/min and the sulfurization temperature of 520 oC. The XRD results confirmed the formation of single-phase monoclinic CTS with high crystalline quality. Raman analysis of sulfurized films showed the Raman modes at 295 cm-1 and 354 cm-1, and these modes confirmed the formation of M-CTS. All the sulfurized films showed Cu/Sn ratio (Cu-poor) close to stoichiometric composition with dense morphology and bandgap energy varied from 0.93-0.95 eV. This article mainly focused and discussed about the influence of heat ramp up rate on the physical properties of M-CTS films. |
| 저자 |
Pallavolu Mohan Reddy, Vasudeva Reddy Minnam Reddy, 박진호
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| 소속 |
영남대 |
| 키워드 |
재료 |
| E-Mail |
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| 원문파일 |
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