| 초록 |
Here, self-patterned zinc tin oxide (ZTO) thin films were prepared using a photo-patternable precursor solution including a photoacid generator. Solution-processed precursor films were successfully micropatterned with UV exposure, which also were transitioned to semiconducting ZTO thin film through heat treatment. The UV-irradiated films became insoluble in developing solvent as the generated proton affected the metal-containing ligand and changed the solubility of metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type thin-film transistors (TFTs), which exhibited a typical n-type transfer and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. |
