| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
Well-tuned digital memory characteristics in diblock copolymer devices depending on lamellar structure and orientation control |
| 초록 |
Poly(2-vinyl-9-phenylcarbazole) (PVPK)-b-poly(2-vinylpyridine) (P2VP) and quaternized P2VP (QP2VP) block copolymers including homopolymers were synthesized: PVPK-P2VP(43/57 in volume) and PVPK-QP2VP(31/69). Microstructure of thin films was confirmed by quantitative synchrotron grazing incidence X-ray scattering (GIXS) analysis. PVPK-QP2VP(31/69) self-assembled as vertical lamellar structure in the carbon disulfide-annealed films, exhibiting p-type unipolar write-once-read-many-times (WORM) memory behavior. In comparison, PVPK-P2VP(43/57) formed horizontal lamellar structure in chloroform-annealed films, revealing p-type unipolar dynamic random access memory (DRAM) behavior. Overall, WORM memory and DRAM behaviors were demonstrated with high performances by the development of well-defined lamellar structure in the block copolymer films and their memory modes could be easily tuned from one to another or vice versa by the orientation control of the lamellar structure. |
| 저자 |
위동우1, 김종현1, 이호열1, 강남구2, 이진석1, 김명진2, 이재석2, 이문호1
|
| 소속 |
1포항공과대, 2GIST |
| 키워드 |
Block copolymer; Electrical memory; Grazing incidence X-ray scattering
|
| E-Mail |
|
