| 초록 |
A chalcogenide material is containing at least more than one element from Group Ⅵ(S, Se and Te) of the periodic table. Chalcogenide based GeSbTe (GST) and InSbTe (IST) are widely known as phase-change material from amorphous state to crystalline state according to annealing temperature. Thermoelectric phenomenon is strongly influenced by phase-change of above materials. In the present study, Ge2Sb2Te5 and In3Sb1Te2 were chosen to measure thermoelectric properties. The GST is already known to show high Seebeck coefficient and low electrical conductivity while IST show high electrical conductivity and low Seebeck coefficient. In order to enhance the thermoelectric properties, the advantages of both materials should be utilized. They were deposited at room temperature using co-sputtering method with different deposition rate. As deposited samples were annealed for crystallization at various temperatures and investigated their electrical conductivity, Seebeck coefficient, and power factor. |
