| 초록 |
Recently, many researchers have devoted their efforts to develop next generation memories such as resistive switching memory, phase change memory, and magnetoresistance memory. These memory devices are expected to replace current memory devices because of its scalability, nonvolatility, and low power consumption. On the other hand, several issue should be solved for the commercialization of these memory devices. For example, reproducibility, leakage current, and cell-to-cell uniformity. Ferroelectric material based memory devices are now gathering attention since Boscke et al. reported ferroelectric hafnia in 2011. HfO2 is compatible with silicon based semiconductor technology which expand its applicability to next generation memories. In this work, Al doped HfO2 was deposited by PEALD and analyzed for the fabrication of ferroelectric field effect transistor (FeFET). The ferroelectric properties such as remnant polarization, endurance and retention are analyzed with different dopant concentration, annealing condition, and film thickness. |
