| 초록 |
Organic field-effect transistors (OFETs) have received considerable attention for the use in gas sensors due to the specific interaction of organic semiconductor to a gas molecule. However, how the grain boundary density of organic semiconductor and surface properties of gate-dielectric affect gas sensor properties have been less investigated. In this study, grain boundary density of organic semiconductor was controlled by changing mixing time of organic semiconductor solution and surface characteristic of gate-dielectric was changed by depositing polymer brush on the gate-dielectric. Electrical properties of OFET gas sensor such as sensitivity, recovery time, and repeatability were evaluated. |
