| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Study on the impact of local doping on the electrical characteristics of ZnO thin films |
| 초록 |
Atomic layer deposition (ALD) is well known to provide means to fabricate conformal, high quality films over extreme structures due to its surface mediated growth mode. This aspect has led the technique to be excerised rigorously in the semiconductor industry, with dynamic random access memory capacitors being the most notable. Recently, the application of this growth method has also been extended to the deposition of the active channel material in the thin film transistor structure. However, most of these studies only focus on the fact that ALD can be used to achieve high quality films. Another feature that requires some deal of attention under these circumstances is the possiblity of local doping in the active channel region. Since ALD is performed on a monolayer basis, this implies that doping can also be achieved in this scale. Therefore, in this study the relatively simple and well defined system of Al-ZnO was selected to perform some initial studies on this aspect. It was found that doping in certain regions of the film had individual impacts on the overall electrical performance of the film. On the basis of this knowledge, we also attempted to incorporate In in the place of Al to produce high mobility devices. Details on the methodology and implications of these results will be provided in the presentation. |
| 저자 |
정윤장, 이영국, 이창완, 강성구, 최원진, 이정오, 공기정
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| 소속 |
한국화학(연) |
| 키워드 |
local doping; accumulation width; TFT; ALD
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| E-Mail |
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