| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Carbon contents control of low-k material with methane plasma |
| 초록 | Resistance-capacitance delay of devices (RC delay) is a major problem because the device dimensions have dramatically reduced. Low dielectric films with having high thermal stability and excellent step coverage is needed for applications such as barriers and gate sidewall spacers. Silicon-based dielectric materials are possible candidates for those requirements because the carbon content and bonding state in silicon-based materials can lowering the dielectric constant. Atomic layer deposition (ALD) can be an ideal method for the high conformality with its self-limited reaction. The introduction of the plasma is necessary to decompose the ligands in the precursor for the ALD reaction by the plasma power. We used Remote plasma ALD (RPALD) to prevent films from substrate damages caused ion bombardment. In this presentation, we developed silicon oxycarbide RPALD with Ar and CH4 plasmas. In ALD recipe, Octamethylcyclotetrasiloxane (OMCTS) was used as a precursor and Ar, CH4 plasmas were used as reactants. In other words, we compared the results of deposition using only Ar plasma, deposition of Ar plasma and CH4 plasma as supercycle, and deposition using only CH4 plasma. In the method of leaving carbon of the precursor, the carbon in the thin film remained at low temperature when SiOC was deposited by Ar plasma, but there was almost no carbon at high temperature. Therefore, SiOC film was deposited by a method of supplying a carbon source using CH4 plasma. In this study we used the carbon containing plasma to input carbon and to control the carbon contents. But 100% CH4 plasma have particle generation problem. So we used 1% of CH4 diluted with Ar to reduce the particle issue. The experiment focused on controlling the amount of carbon in the thin film rather than leaving a lot of carbon in the thin film. We had conducted several experiments for chemical and electrical properties. We utilized Auger electron spectroscopy (AES) to observe atomic concentration. Reflective Index values were used to predict film densities. X-ray photoelectron spectroscopy (XPS) and Fourier-transform Infrared spectroscopy (FT-IR) were carried out to observe chemical bonding structures, especially for Si and C related peaks. Au-SiOC-Si (MIS) device was fabricated to investigate electrical properties. C-V measurement was utilized to extract dielectric constants. I-V measurement was conducted for leakage current and breakdown voltage. |
| 저자 | 송석휘, 정찬원, 김영준, 김종우, 권유림, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Remote plasma atomic layer deposition; low dielectric material |
