| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Selective epitaxial growth of wurtzite GaN on patterned sapphire substrate by metal-organic chemical vapor deposition |
| 초록 |
The selective growth of GaN by metal-organic chemical vapor deposition(MOCVD) has been carried out on patterned sapphire substrate (PSS). But due to various orientation on PSS lens, when growing GaN on PSS without proper condition, there are various orientation of poly-crystalline GaN on the PSS lens. These poly-crystalline GaN on the PSS lens make the various defects. To avoid to various orientation of GaN growth, we find the method to cover the PSS lens by SiO2 through the several process. In this study, we deposited GaN on PSS with or without SiO2, then we compared with two sample to confirm the effect of SiO2 mask. Also we analysis the crystal quality of GaN by X-ray diffraction, chemiluminescence, scanning electron microscopy. |
| 저자 |
안민주, 변동진, 정우섭, 조승희, 심규연, 강성호, 김효종
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| 소속 |
고려대 |
| 키워드 |
<P>GaN; epitaxy; MOCVD; SiO2</P>
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| E-Mail |
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