| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
The study of the GaN micro-rod selective area growth morphology depends on the buffer layer by MOCVD |
| 초록 |
Recently, the researchers who had studied about LED, have attempted to fabricate small size of LED under micro diameter or different shape of LED. There are two methods to fabricate the rod shape of LED: top-down and bottom-up. The bottom up method has advantage of no damage and high quality of crystalline even though this method is quite difficult to epi-growth. This is the first step of study of GaN micro-rod epi-growth, the GaN micro-rod are grown with selective area growth by MOCVD on the patterned sapphire substrate. From the kind of the buffer layer on the polished PSS, we can figure out the GaN micro-rod morphology depends on the buffer layer. The GaN morphology was analyzed through a scanning electron microscope and the polarity was analyzed by KOH etching. |
| 저자 |
안민주, 정우섭, 심규연, 강성호, 김효종, 변동진
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| 소속 |
고려대 |
| 키워드 |
MOCVD; GaN
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| E-Mail |
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