| 초록 |
Memory technology has been rapidly developed over the last decades due to its wide use in electronic appliances. Among various kinds of memory devices, nano-floating gate memory (NFGM) devices have attracted tremendous attention as a promising next-generation memory device because of their advantages such as simple device structure, electrical stability and operation feasibility from a single unit transistor. Herein, we report novel nonvolatile NFGM devices utilizing cobalt ferrite (CoFe2O4) nanoparticles (NPs) as the charge trap sites with pentacene as a p-type semiconductor. The solution-processed CoFe2O4 NPs enable facile, cost effective, and fast deposition on the target substrates at a low temperature via a simple spin-casting technique. The programmable memory devices show superb electrical memory characteristics owing to the remarkable electron trap/release capability of the CoFe2O4 NPs. |
