| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 가을 (10/21 ~ 10/23, 일산 KINTEX) |
| 권호 |
21권 2호, p.2036 |
| 발표분야 |
재료 |
| 제목 |
Bistable Organic Nano-Floating Gate Memory Devices Based on Cobalt Ferrite Nanoparticles |
| 초록 |
Transistor-type nano-floating gate memory (NFGM) devices use nanostructured materials as charge trap sites. They have attracted great interest because of their suitability as platforms for integrated circuits and their excellent memory properties with inexpensive fabrication processes, which make them highly promising for the next-generation data storage devices. Herein, we report novel nonvolatile NFGM devices utilizing cobalt ferrite (CoFe2O4) nanoparticles (NPs) as the charge trap sites with pentacene as a p-type semiconductor on a flexible and transparent polymer substrate as well as on a conventional silicon wafer. CoFe2O4 NP-based memory devices exhibit excellent memory characteristics including a large memory window, fast and reversible switching behaviors, high read current ON/OFF ratio, and outstanding data retention capability due to the outstanding electron trap/release capability of CoFe2O4 NPs and the oleate layer surrounding NPs which acts as an alternative tunneling dielectric layer. Our findings demonstrate a viable way for the fabrication of highly flexible and wearable memory devices. |
| 저자 |
오준학1, 박종남2, 김현중2, 김성환2, 정지형1
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| 소속 |
1포항공과대, 2울산과학기술대 |
| 키워드 |
Nano-floating gate memory; cobalt ferrite; nanoparticle; pentacene; organic memory
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| E-Mail |
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| 원문파일 |
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