| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Temperature dependence of AlN buffer layer deposited on Si substrate |
| 초록 |
When gallium nitride (GaN) is grown directly on a silicon substrate, it is difficult to grow GaN thin film due to the difference in lattice mismatch and thermal expansion coefficient between the GaN layer and the silicon substrate. Aluminum nitride (AlN) is mainly researched as a buffer layer to reduce such problems between the GaN layer and the silicon substrate. We studied the characteristics of AlN buffer layer to grow GaN epitaxial layer. In order to investigate the temperature dependency of the AlN buffer layer deposited on the silicon (111) substrate, the AlN buffer layer was deposited at various temperature by RF Magnetron Sputter. The characteristics of the AlN buffer layer were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). |
| 저자 |
강성호, 정우섭, 조승희, 안민주, 심규연, 변동진
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| 소속 |
고려대 |
| 키워드 |
AlN buffer layer; RF magnetron sputter
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| E-Mail |
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