| 학회 |
한국화학공학회 |
| 학술대회 |
2014년 가을 (10/22 ~ 10/24, 대전 DCC) |
| 권호 |
20권 2호, p.1944 |
| 발표분야 |
재료 |
| 제목 |
Advanced 3D feature profile simulation for realistic plasma etch studies |
| 초록 |
With continuous decreases of critical dimension up to below 10 nm in semiconductor industries, one of the emerging challenges with plasma etch is to achieve the ideal ultra-high aspect ratio contact hole. To date, next generation development of these processes still depends on trial and error instead of computer-aided methods due to absence of highly reliable simulation tools. To address these issues, a 3D feature profile simulator, which was named as K-SPEED, has been developed by a plasma consortium in our country since 2009. This simulator is coupled strongly with global reactor and nano feature scale simulations including realistic plasma/surface chemistries. In this work, novel advanced technologies such as effective coupling approach between reactor and feature scales, and various parallel computing technologies are introduced in order to make realistic engineering interpretation possible. Finally, several case studies for recent plasma processes will be demonstrated. |
| 저자 |
육영근, 유동훈, 조덕균, 최광성, 임연호, 장원석, 이세아, 천푸름
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| 소속 |
전북대 |
| 키워드 |
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| E-Mail |
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| 원문파일 |
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