| 초록 |
There are two ways to grow GaN rods: bottom up and top down. In the case of the top down method, it is simpler than the bottom up method by using an etching technique, but it adversely affects the device quality. The GaN rod method we manufactured this time is a bottom-up method. therefore it becomes a basic step to grow the rod. If the lift-off method used in this manufacturing method is used, masking is produced only by photolithography without using reactive ion etching (RIE), so it is possible to form a masking pattern more simply than the conventional manufacturing method. In addition, LT GaN and AlN are mainly used as buffers to reduce the lattice constant with the substrate. In order to grow GaN rods, an AlN buffer that grows in the shape of a hexagonal cone is essential. furthermore, if a mask is stacked and GaN is grown thereon, different polarities may be grown at the interface due to the inversion domain boundary (IDB). Therefore, in this study, conditions for making high-quality rods were prepared by growing AlN buffer and GaN before covering the mask. |
