| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | 선택적 영역 원자층 증착법을 이용한 Al2O3 나노 박막 및 반응 메커니즘 연구 |
| 초록 | The area selective atomic layer deposition (AS-ALD) processes for various systems using self-assembled monolayers (SAMs) have been developed based on pre-developed ALD processes. Al2O3 films have been the most widely investigated ALD process, but, interestingly, previous experimental reports showed Al2O3 thin films by using AS-ALD process was not selectively deposited. Rather, previous density functional theory (DFT) study showed that Al2O3 films can be selectively deposited by using SAMs. Motivated by this inconsistence, we systematically investigated “Reaction Mechanism of AS-ALD for Al2O3 Nanopatterns” with the correlation between experimental and theoretical studies. From this study, we firstly found out that ALD Al2O3 film was deposited by the reaction of physisorbed precursors by DFT study, molecular dynamics simulations, and experimental observation. It is an opposite to a common view in ALD society, where ALD films only grow through chemisorbed precursors. In this work, after the optimization of coating methods and the selection of SAM, we investigated the selectivity of Al2O3 on ALD process parameters such as process temperature, precursor exposure pressure and time, and purging pressure and time. To clarify, we used various analytic techniques such as water contact angle (WCA) measurement, X-ray photoelectron spectroscopy (XPS), and α-scanning. Although we controlled the exposure (timeⅹpressure) and temperature, we found out that only pressure control affects to achieve AS-ALD. Compared to reference process for Al2O3, we observed dramatic improvement of selectivity, 97% by using controlled process. Furthermore, for practical process, we reduced 90% of process time with same selectivity. We achieve more than 60 nm selectivity of Al2O3 patterns which is a world best value for AS-ALD by using SAMs as far as we know. This fundamental research on surface chemistry of reaction of AS-ALD Al2O3 presents opportunities to explore nanoscale patterning technology towards realizing electronic nanoscale devices. |
| 저자 | 오일권, 김형준 |
| 소속 | 연세대 |
| 키워드 | <P>Al<SUB>2</SUB>O<SUB>3</SUB> 나노 박막; 선택적 영역 원자층 증착법; 반응 메커니즘 연구</P> |
