| 학회 | 한국공업화학회 |
| 학술대회 | 2022년 봄 (05/11 ~ 05/13, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 | 26권 1호 |
| 발표분야 | 포스터-에너지저장·변환 |
| 제목 | Characteristics of Non-IGZO-Based Oxide TFTs Fabricated under Various Film Deposition Conditions |
| 초록 | Indium-Gallium-Zinc-Oxide (IGZO)-based materials have been widely used in fabricating oxide thin-film transistors (TFTs) due to their beneficial properties such as high mobility and availability of low temperature process. However, as IGZO patents are owned by Japan and the prices of indium and gallium are expensive, a need for discovering non-IGZO-based materials emerged, which can reduce dependency on indigenous patents and lower the price of materials. As a method of fabricating oxide TFTs, vacuum processes such as sputter and atomic layer deposition (ALD) are mainly used, and low-cost solution processes are also used. In this study, we fabricated non-IGZO-based oxide TFTs under various film deposition conditions and evaluated its characteristics.The fabricated TFTs exhibited n-type characteristics with a field-effect mobility of 2.94cm2/Vs, subthreshold swing (SS) of 0.653V/decade, and an on/off ratio of 2.7 x 105. |
| 저자 | 홍정표1, 황부경1, 박인표2, 최준영1, 허수원1 |
| 소속 | 1한국세라믹기술원, 2한국세라믹기술원 / 부산대 |
| 키워드 | Oxide TFT; Thin Film Transistor; Film Deposition |
