| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Fabrication of anti-ESD photomask with charge channeling by introducing transparent conductive material between chromium patterns through partial erosion control of resist |
| 초록 | Conductive ITO materials were introduced in the form of bridging between Chromium patterns to improve the electrostatic-induced pattern damage problem of contact type lithography photomasks. It is very difficult to deposit a conductive material without electrical disconnection due to the undercut nature of the Chromium layer, which inevitably occurs due to the isotropic nature of wet etching. In this work, a method called UV-Assisted-Partial-Strip (UAPS) was used to appropriately induce changes in the solubility and erosion properties of the resist through additional UV irradiation and optimization of the alkaline solution process after the standard lithography process. Subsequently, it was induced to facilitate connection with Chromium during the deposition of conductive ITO(Indium Tine Oxide). The optimized ITO thin film had a thickness of 20 nm, a sheet resistance of 3.0 x 102 Ω / ㎠, and a light transmittance of 84 %. In the hand silicon rolling test, the ITO-coated specimen showed more than 6 times more electrostatic durability than the uncoated specimen. In the electrostatic discharge immunity test using an electrostatic application gun, the maximum endurance limit of the ITO-coated specimen was 28 kV, whereas the uncoated specimen had a maximum endurance limit of 1.8 kV. This study proposes a high performance anti-static photomask technology that can achieve high transmission without electrical disconnection through partial erosion control of resist called UAPS (UV-Assisted-Partial-Strip). |
| 저자 | 인장식, 정대용, 김승욱, 김삼정 |
| 소속 | 인하대 |
| 키워드 | Photomask; Contact Lithography; Electrostatic Damage; Transparent Conductive Oxide |
