화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터)
권호 47권 1호
발표분야 분자전자 부문위원회
제목 High Mobility Low-voltage Operation in Anion Doped Single-walled Carbon Nanotube (Single-walled carbon nanotube) Network n-type Field Effect Transistors (CNTFETs)
초록 Solution-processed semiconductor doping would be a powerful strategy in order to improve carbon nanotube field-effect transistors (CNTFETs) performance. CNTs are promising material for high performance, large area printable thin film transistors. However, ambipolar property of SWNTs have drawbacks in CMOS-like circuits such as large static power consumption. N-type doping is more challenging issue in solution processed FETs rather than p-type. We sorted large diameter semiconducting-SWNTs with the high purity from as-grown mixed-type SWNTs using conjugated polymer. Selectively sorted s-SWNTs and Lewis base anion dopant were simply spin coated for active layer. We successfully conducted CNTFETs n-type doping and it was revealed optically such as UPS, UV-VIS-NIR and Raman spectroscopy. The devices were also electrically analyzed using contact resistance and carrier concentration. Doped CNTFETs were operated only at Vd of 0.5 V and 1.7 folds mobility increment was achieved.
저자 양동성, 문이나, 한나라, 이민우, 김영효, 김동유
소속 광주과학기술원
키워드 carbon nanotube; field-effect transistor; doping
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